4v drive nch + nch mosfet MP6K14 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) high power package(mpt6). 3) low voltage drive(4v drive). ? application switching ? packaging specifications ? inner circuit package taping code tcr basic ordering unit (pieces) 1000 MP6K14 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 8.0 a pulsed i dp ? 18 a continuous i s 1.6 a pulsed i sp 18 a 2.0 w / total 1.4 w / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. p d type source current (body diode) drain current parameter power dissipation mpt6 (duel) (1) (2) (3) (6) (5) (4) *2 *1 *1 (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ?1 esd protection diode ?2 body diode ?2 ?2 ?1 ?1 (1) (2) (3) (6) (5) (4) 1/6 2011.03 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
MP6K14 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gatesource leakage i gss ??? 10 ? av gs = ? 20v, v ds =0v drainsource breakdown voltage v (br)dss 30 ?? vi d =1ma, v gs =0v zero gate voltage drain current i dss ?? 1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 ? 2.5 v v ds =10v, i d =1ma ? 18 25 i d =8.0a, v gs =10v ? 21 29 i d =8.0a, v gs =4.5v ? 23 32 i d =8.0a, v gs =4.0v forward transfer admittance l y fs l 4.5 ?? si d =8.0a, v ds =10v input capacitance c iss ? 470 ? pf v ds =10v output capacitance c oss ? 170 ? pf v gs =0v reverse transfer capacitance c rss ? 80 ? pf f=1mhz turnon delay time t d(on) ? 8 ? ns i d =4.0a, v dd 15v rise time t r ? 30 ? ns v gs =10v turnoff delay time t d(off) ? 39 ? ns r l =3.75 ? fall time t f ? 9 ? ns r g =10 ? total gate charge q g ? 7.3 ? nc i d =8.0a, v dd 15v gatesource charge q gs ? 1.5 ? nc v gs =5v gatedrain charge q gd ? 2.9 ? nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd ?? 1.2 v is=8.0a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drainsource onstate resistance r ds (on) * * * * * * * * * * 2/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6K14 ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 4 5 6 7 8 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =2.5v v gs =10.0v v gs =2.8v v gs =3.0v v gs =4.5v v gs =4.0v t a =25 c pulsed 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.0v v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.0v v gs =2.5v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =4.0v v gs =4.5v v gs =10v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 100 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs =4v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 3/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6K14 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate - source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 source current : is [a] source - drain voltage : v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 10 20 30 40 50 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d =8.0a i d =4.0a t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 100 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P 15v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 5 10 15 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =15v i d =8a pulsed 4/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6K14 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) v gs = 10v p w = 100 s p w = 1ms p w = 10ms dc operation 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =89.3 c /w rth (ch - a) (t)=r(t) rth (ch - a) 5/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6K14 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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